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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3479
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3479 2SK3479-S 2SK3479-ZJ 2SK3479-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote
FEATURES
* Super low on-state resistance: RDS(on)1 = 11 m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 m MAX. (VGS = 4.5 V, ID = 42 A) * Low Ciss: Ciss = 11000 pF TYP. * Built-in gate protection diode
Note TO-220SMD package is produced only in Japan. (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
100 20 83 332 125 1.5 150 -55 to +150 65 422
V V A A W W C C A mJ (TO-263, TO-220SMD) (TO-262)
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15077EJ1V0DS00 (1st edition) Date Published July 2001 NS CP(K) Printed in Japan
(c)
2000, 2001
2SK3479
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 80 V VGS = 10 V ID = 83 A IF = 83 A, VGS = 0 V IF = 83 A, VGS = 0 V di/dt = 100 A/s TEST CONDITIONS VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 42 A VGS = 10 V, ID = 42 A VGS = 4.5 V, ID = 42 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 50 V, ID = 42 A VGS = 10 V RG = 0 1.5 37 74 8.8 10 11000 1100 540 27 18 140 13 210 26 60 1.0 85 280 11 13 MIN. TYP. MAX. 10 10 2.5 UNIT
A A
V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D15077EJ1V0DS
2SK3479
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150
PT - Total Power Dissipation - W
100 80 60 40 20
125 100 75 50 25
0
20
40
60
80
100
120 140 160
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 1000
ID(pulse)
ID - Drain Current - A
100
0 d s ite V) 1 m0 m Li = 1 ID(DC) s 10 ) Po on S m S( G Li we DC s mr RDat V ite Di ( d ss
ip at io n
10
PW
=
10
s
10
1 TC = 25C Single Pulse 0.1 0.1 1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 83.3C/W
10
1
Rth(ch-C) = 1C/W
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D15077EJ1V0DS
3
2SK3479
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
300 250
ID - Drain Current - A
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
100
ID - Drain Current - A
VGS =10 V 200 150 100 50 4.5 V
10
TA = -40C 25C 75C 150C
1
0.1
1
2
3
4
VDS = 10 V 5 6
0
Pulsed 1 2 3 4 5 VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 16
100 VDS = 10 V Pulsed 10 TA = 150C 75C 25C -40C
12 ID = 83 A 8 42 A
1
0.1
4
0.01 0.01
0.1
1
10
100
0
5
10
15
20
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 Pulsed
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0
VGS(off) - Gate Cut-off Voltage - V
40
2.5 2.0 1.5 1.0 0.5 0 -50
VDS = 10 V ID = 1 mA
30
20 VGS = 4.5 V 10 10 V 1 10 100 1000
0
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D15077EJ1V0DS
2SK3479
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 Pulsed 20 VGS = 4.5 V 10 V 10
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed
100
VGS = 10 V 0V
15
10
5 ID = 42 A -50 0 50 100 150
1
0
0.1 0
0.5
1.0
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz
tf td(off) 100 td(on) 10 VDD = 50 V VGS = 10 V RG = 0 1 0.1 tr
10000
Ciss
1000 Coss Crss 1 10 100
100 0.1
1
10
100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
di/dt = 100 A/s VGS = 0 V
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 160 16
VGS - Gate to Source Voltage - V
120 VDD = 80 V 50 V 20 V
12
100
80
VGS
8
10
40 VDS 0 50 100 150 ID = 83 A 200
4
1 0.1
1.0
10
100
0 250
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D15077EJ1V0DS
5
2SK3479
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1000
IAS - Single Avalanche Current - A
Energy Derating Factor - %
SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 80 60 40 20
VDD = 50 V RG = 25 VGS = 20 0 V IAS 65 A
100
IAS = 65 A
EAS =4 22 m
J
10 VDD = 50 V RG = 25 VGS = 20 0 V 100 1m 10 m L - Inductive Load - H
1 10
0 25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D15077EJ1V0DS
2SK3479
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25) 2) TO-262(MP-25 Fin Cut)
3.00.3
10.6 MAX. 10.0 TYP.
1.00.5
4.8 MAX.
3.60.2
5.9 MIN.
4.8 MAX. 1.30.2
1.30.2
10 TYP.
15.5 MAX.
4 1 2 3
4 123
6.0 MAX.
1.30.2
12.7 MIN.
1.30.2
12.7 MIN.
8.50.2
0.750.3 2.54 TYP. 0.50.2 2.80.2
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
3)
TO-263 (MP-25ZJ)
4) TO-220SMD(MP-25Z)
Note
10 TYP. 4
1.00.5 8.50.2
4.8 MAX. 1.30.2
10 TYP. 4
1.00.5 8.50.2
4.8 MAX. 1.30.2
1 1.40.2 0.70.2 2.54 TYP.
2
3
1
TY P.
T . YP
2
3
1.10.4
5.70.4
3.00.5
1.40.2 0.50.2 0.750.3 2.54 TYP.
0
.5R
2.54 TYP.
0.8
R
.8 2.54 TYP. 0
0
.5R
TY
R
P. P. TY
0.50.2
2.80.2
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Remark
Body Diode
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate
Gate Protection Diode
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Source
Data Sheet D15077EJ1V0DS
7
2SK3479
* The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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